-
1 doping impurity
легуюча домішкаEnglish-Ukrainian dictionary of microelectronics > doping impurity
-
2 impurity
1) (легуюча) домішка 2) забруднення, небажана домішка - atomic impurity
- background impurity
- base impurity
- channel-stop impurity
- compensated impurity
- compensating impurity
- conductivity -type- determining impurity
- conductivity determining impurity
- contaminating impurity
- deep-level impurity
- deep-lying impurity
- diffusant impurity
- diffusing impurity
- donor impurity
- dopant impurity
- doping impurity
- emitter impurity
- free carrier impurity
- group V impurity
- implanted impurity
- interstitial impurity
- ion implanted impurity
- lifetime killing impurity
- lifetime shortening impurity
- migrating impurity
- molecular impurity
- n-type impurity
- polarized impurity
- p-type impurity
- shallow-level impurity
- shallow-lying impurity
- spin-on impurity
- stoichiometric impurity
- substitutional impurity
- transition metal impurity
- trap impurity
- ultratrace impurity -
3 profile
1. ім.1) профіль2) розріз; перетин2. дієсл. профілювати - Auger depth profile
- charge-carrier density profile
- chip profile
- concentration profile
- density profile
- depth profile
- diffusion profile
- dopant profile
- doping profile
- drift mobility profile
- etch profile
- firing profile
- Gaussian impurity profile
- graded profile
- hyperabrupt profile
- impurity profile
- ion-implantation profile
- lateral doping profile
- low profile
- n profile
- p profile
- potential profile
- resist profile
- resistivity profile
- solder-melt profile
- tailored doping profile
- undercut profile
- vertical doping profile -
4 concentration
концентрація - background impurity concentration
- background concentration
- bulk impurity concentration
- defect concentration
- dopant concentration
- doping concentration
- dosage concentration
- emitter impurity concentration
- graded impurity concentration
- intrinsic concentration
- ionized-impurity concentration
- per-unit-area concentration
- per-unit-volume concentration
- recombination-сеnter concentration
- surface-state concentration
- vacancy concentrationEnglish-Ukrainian dictionary of microelectronics > concentration
-
5 ion
іон- acceptor-impurityion- acceptorion
- ad ion
- donor-impurityion
- donorion
- dopant ion
- doping ion
- impurity ion
- n-type impurity ion
- parent molecular ions
- p-type impurity ion
- reactive ion -
6 region
область; зона; ділянка (див. т-ж area, zone) - active TEG GaInAs region
- alloyed region
- avalanche region
- barrier region
- border region
- boundary region
- breakdown region
- buried region
- channel region
- channel stopреr region
- channel stop region
- charge-transfer region
- collector region
- conduction region
- conductor region
- cutoff region
- deep-UV region
- degenerate region
- depletion mode region
- depletion region
- deuterons implanted region
- diffusion-isolated region
- drain region
- drift region
- D-well region
- encroaching region
- enhanced region
- epitaxial region
- exposed region
- extrinsic region
- field region
- floating region
- forbidden region
- gate region
- graded region
- heavily-doped region
- high-conductivity region
- high-impurity region
- high-resistivity region
- hydrogenated region
- impurity region
- inactive region
- infrared region
- injection region
- injector region
- inset region
- insulation region
- insulator region
- interface region
- intrinsic region
- ion-implanted region
- island region
- isolation region
- junction region
- low-impurity region
- low-resistivity region
- multiplication region
- n region
- narrow-gap region
- near-UV region
- n-tab region
- ohmic contact region
- p region
- peripheral region
- periphery region
- polysilicon-on-охide region
- proton-damaged region
- proton implanted region
- reach-through region
- recessed охide region
- recombination region
- self-aligned regions
- shallow region
- shield region
- silicon-sapphire interface region
- softening region
- source region
- spreading-resistance region
- stack regions
- stepped-doping region
- storage region
- strip-like region
- strip-shaped region
- Strongly n-type region
- subcollector region
- subthreshold region
- superlattice region
- tank region
- terminating region
- thermally grown охide region
- transfer region
- transit-time region
- ultraviolet region
- V-groove region
- weak inversion region
- well region
- wide-gap region -
7 distribution
- charge distribution
- congestion distribution
- cumulative service time distribution
- defect-density distribution
- degenerate distribution
- depth distribution
- dopant distribution
- doping distribution
- electron energy distribution
- error-function distribution
- Fermi distribution
- field distribution
- Gaussian distribution
- impurity distribution
- nondegenerate distribution
- Maxwell distribution
- power distribution
- space [spatial] distribution
- velocity distribution
- 3-D distributionEnglish-Ukrainian dictionary of microelectronics > distribution
-
8 element
1) елемент; компонент; прилад; інтегральна схема, ІС (див. т-ж chip, circuit, component) 2) (хімічний) елемент - array element
- capacitive-storage element
- chevron propagating element
- chip element
- circuit element
- column III & V element
- combinational logic element
- control element
- cryogenic element
- distributed element
- doping element
- electronic element
- field-effect-transistor element
- floating-gate element
- functional element
- fuse element
- generic element
- Gunn element
- Hall element
- image element
- impurity element
- inclusive OR element
- integrated element
- inverting element
- Josephson junction element
- key element
- library element
- light-emitting semiconductor element
- light-receiving element
- linear element
- logical element
- lumped-circuit element
- magnetic propagation element
- majority element
- march element
- matrix element
- memory element
- microcircuit element
- microelectronic element
- monolithic element
- multiple logic element
- NAND element
- NAND-NOR element
- negative-resistance element
- network element
- nonlinear element
- one-transistor element
- optoelectronic element
- parasitic element
- passive element
- pattern element
- phantom element
- picture element
- propagating element
- propagation element
- redundant element
- resolution element
- semiconductor element
- shared element
- solid-state element
- stripe-geometry element
- superconducting element
- thick-film element
- thin-film element
- ultratrace element -
9 layer
1. ім. шар; плівка 2. дієсл. наносити шар - accumulation layer
- amorphized layer
- anti-oxidation layer
- barrier layer
- base layer
- blanket layer
- blocking layer
- boundary layer
- branch layer
- buffer layer
- buried layer
- cap layer
- composite layer
- conducting layer
- conductor layer
- contact layer
- continuous layer
- depletion layer
- deposited layer
- diffused [diffusion] layer
- diffusion-impervious layer
- diffusion-source layer
- doped layer
- driving layer
- epitaxial layer
- epi layer
- etch-resistant layer
- evaporated layer
- evaporation layer
- field oxide layer
- Gaussian-doped layer
- heteroepitaxial layer
- high-concentration layer
- high-mobility layer
- homoepitaxial layer
- host layer
- implantation layer
- implanted layer
- impurity layer
- inert layer
- injection layer
- injector layer
- inset oxide layer
- insulating layer
- insulation layer
- insulator layer
- interconnection layer
- interface layer
- interfacial layer
- interlayer dielectric film layer
- intrinsic layer
- inversion layer
- ion-implantation layer
- lacquer layer
- lightly doped layer
- liquid-phase epitaxial layer
- low-mobility layer
- masking layer
- metallizationlayer
- metallayer
- metallized layer
- molecular epitaxy layer
- monoatomic layer
- monomolecular layer
- multiple layer
- multiple wiring layers
- n layer
- native layer
- nucleating layer
- ohmic layer
- organic passivation layer
- oxide-inhibiting layer
- p layer
- passivating layer
- passivation layer
- photosensitive layer
- planarizing layer
- polysilicon layer
- protective layer
- pyrolytically deposited layer
- registered layers
- resistive layer
- sacrificial layer
- sandwiched layers
- sealing layer
- seal layer
- separation layer
- signal layer
- source layer
- space-charge layer
- stepped layers
- stopping layer
- substrate layer
- superconductive layer
- superimposed layers
- superlattice layer
- supported semiconductor layer
- thermal-охide layer
- transition layer
- vacuum-deposited layer
- vacuum-evaporated layer
- via layer
- wiring layer
- wiring channel layer
- δ-doping layer -
10 level
1. ім.1) рівень2) ступінь (напр. інтеграції)2. дієсл. вирівнювати, розрівнювати - acceptor energy level
- algorithmic level
- allowed level
- automation level
- behavioral level
- chip complexity level
- chip level
- circuit level
- circuit complexity level
- complexity level
- concentration level
- confidence level
- damage level
- dc level
- deep level
- defect level
- degenerate level
- discrete energy level
- discrete level
- donor energy level
- doping level
- dynamic level
- electrical level
- electron quasi-Fermi level
- empty level
- filled level
- functional level
- functionality level
- gate level
- hole quasi-Fermi level
- impurity level
- input level
- integration level
- interconnection level
- logic level
- logical one level
- logical zero level
- logic gate level
- mask level
- masking level
- metallization level
- noise level
- occupied level
- register transfer level
- resistivity level
- saturation level
- shallow level
- sheet-resistance level
- steady-state level
- submicron level
- superficial level
- switch level
- transistor switch level
- trapping level
- TTL level
- two-resist level
- unfilled level
- unknown logic level
- vacant level
- wafer level -
11 material
матеріал - acceptor material
- adulterated semiconductor material
- base material
- binding material
- brittle material
- bubble material
- carrier material
- cermet material
- coarse-featured resist material
- composite material
- compound semiconductor material
- conductivity-type imparting material
- contact material
- contrast enhancing material
- dopant masking material
- doped material
- doping material
- electronic material
- electron resist material
- encapsulating material
- encapsulation material
- epitaxial material
- etchant masking material
- etching material
- evaporated material
- evaporation material
- filler material
- film material
- fine-featured resist material
- foreign material
- fragile material
- group III-V compound semiconductor material
- heavily doped material
- high-resistivity material
- host material
- impurity material
- laminated material
- liquid-crystal material
- lowly doped material
- low-resistivity material
- LSCO material
- magnetostrictive material
- mask-forming material
- mask material
- mismatched materials
- molding material
- multilayer material
- negative-image material
- organosilicone material
- packaging material
- parent material
- patterned material
- photoresist material
- photoresponsive material
- photosensitive material
- piezoelectric material
- plastic material
- polycrystalline material
- positive-image material
- refractory material
- resist material
- resistive material
- semiconductive material
- semiconductor material
- semiconductor-glass composite material
- silicon-on-insulator material
- silicon-on-sapphire material
- Si-MBE material
- single-crystal material
- spinel material
- starting material
- stop-etch material
- substrate material
- superconducting material
- support material
- thallium-based material
- thixotropic material
- virgin material
- Y–Ba–Cu–O material
- Y1–Ba2–Cu3–O7-x material
- 1-2-3 material -
12 type
См. также в других словарях:
doping impurity density — legiravimo priemaišų tankis statusas T sritis radioelektronika atitikmenys: angl. dopant density; doping impurity density vok. Dotierstoffdichte, f; Dotierungsdichte, f rus. плотность легирующей примеси, f pranc. densité de dopant, f; densité d… … Radioelektronikos terminų žodynas
doping impurity type — legiravimo priemaišų tipas statusas T sritis radioelektronika atitikmenys: angl. dopant type; doping impurity type vok. Dotierungstyp, m; Störstellentyp, m rus. тип легирующей примеси, m pranc. type de dopage, m; type d impureté dopante, m … Radioelektronikos terminų žodynas
doping impurity diffusion — legiravimo priemaišų difuzija statusas T sritis radioelektronika atitikmenys: angl. doping impurity diffusion vok. Störstellendiffusion, f rus. диффузия легирующей примеси, f pranc. diffusion d impureté dopante, f … Radioelektronikos terminų žodynas
Doping (semiconductor) — In semiconductor production, doping intentionally introduces impurities into an extremely pure (also referred to as intrinsic) semiconductor for the purpose of modulating its electrical properties. The impurities are dependent upon the type of… … Wikipedia
impurity doping — priemaišinis legiravimas statusas T sritis radioelektronika atitikmenys: angl. impurity doping vok. Dotierung mit Fremdatomen, f rus. примесное легирование, n pranc. dopage d impureté, m … Radioelektronikos terminų žodynas
impurity doping profile — legiravimo priemaišų profilis statusas T sritis radioelektronika atitikmenys: angl. dopant distribution profile; impurity doping profile vok. Störstellendotierungsprofil, n rus. профиль распределения легирующей примеси, m pranc. profil d impureté … Radioelektronikos terminų žodynas
Extrinsic semiconductor — An extrinsic semiconductor is a semiconductor that has been doped , that is, into which a doping agent has been introduced, giving it different electrical properties than the intrinsic (pure) semiconductor. Doping involves adding dopant atoms to… … Wikipedia
Dotierstoffdichte — legiravimo priemaišų tankis statusas T sritis radioelektronika atitikmenys: angl. dopant density; doping impurity density vok. Dotierstoffdichte, f; Dotierungsdichte, f rus. плотность легирующей примеси, f pranc. densité de dopant, f; densité d… … Radioelektronikos terminų žodynas
Dotierungsdichte — legiravimo priemaišų tankis statusas T sritis radioelektronika atitikmenys: angl. dopant density; doping impurity density vok. Dotierstoffdichte, f; Dotierungsdichte, f rus. плотность легирующей примеси, f pranc. densité de dopant, f; densité d… … Radioelektronikos terminų žodynas
densité d'impureté dopante — legiravimo priemaišų tankis statusas T sritis radioelektronika atitikmenys: angl. dopant density; doping impurity density vok. Dotierstoffdichte, f; Dotierungsdichte, f rus. плотность легирующей примеси, f pranc. densité de dopant, f; densité d… … Radioelektronikos terminų žodynas
densité de dopant — legiravimo priemaišų tankis statusas T sritis radioelektronika atitikmenys: angl. dopant density; doping impurity density vok. Dotierstoffdichte, f; Dotierungsdichte, f rus. плотность легирующей примеси, f pranc. densité de dopant, f; densité d… … Radioelektronikos terminų žodynas